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Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial films
Alexander A. Lebedev, Pavel L. Abramov, Sergey P. Lebedev, Gagik A. Oganesyan, Alla S. Tregubova, Dmitrii V. ShamshurVolume:
404
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.physb.2009.08.183
File:
PDF, 367 KB
english, 2009