Charge carrier removal rates in n-type silicon and silicon...

Physica B: Condensed Matter 2009 Vol. 404; Iss. 23-24

Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation

V.V. Kozlovski, V.V. Emtsev, A.M. Ivanov, A.A. Lebedev, G.A. Oganesyan, D.S. Poloskin, N.B. Strokan
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Volume:
404
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.physb.2009.08.191
File:
PDF, 202 KB
english, 2009
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