Effect of the composition and annealing conditions of precursor films on the structure of thin CuIn1 −xGaxSe2(0 ≤x≤ 0.7) layers
M. V. Gapanovich,I. N. Odin,V. F. Kozlovskii,G. F. NovikovVolume:
50
Language:
english
Journal:
Inorganic Materials
DOI:
10.1134/S002016851408007X
Date:
August, 2014
File:
PDF, 671 KB
english, 2014