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The influence of sapphire substrate orientation on crystalline quality of GaN films grown by hydride vapor phase epitaxy
Anatolij Govorkov, Alexsandr Donskov, Lev Diakonov, Yulia Kozlova, Sergej Malahov, Alexsandr Markov, Mikhail Mezhennyi, Vladimir Pavlov, Alexsandr Polykov, Tatiana YugovaVolume:
404
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.physb.2009.08.211
File:
PDF, 311 KB
english, 2009