LIMITING THE OVERSHOOT ON IGBT DURING TURN-OFF USING STRAY INDUCTANCE
Eric Azeroual,Dipl.-Ing. Jean-Marc Cyr NgVolume:
7
Language:
english
Journal:
ATZelektronik worldwide
DOI:
10.1365/s38314-012-0111-4
Date:
October, 2012
File:
PDF, 1007 KB
english, 2012