Flicker Noise Behavior in Resistive Memory Devices With...

IEEE Electron Device Letters 2013 / 02 Vol. 34; Iss. 2

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

Lee, Jung-Kyu, Jung, Sunghun, Choe, Byeong-In, Park, Jinwon, Chung, Sung-Woong, Roh, Jae Sung, Hong, Sung-Joo, Park, Chan Hyeong, Park, Byung-Gook, Lee, Jong-Ho
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2235401
Date:
February, 2013
File:
PDF, 518 KB
english, 2013
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