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[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - An advanced BiCMOS process utilizing ultra-thin silicon epitaxy over arsenic buried layers
El-Diwany, M., Borland, J., Chen, J., Hu, S., van Wijnen, P., Vorst, C., Akylas, V., Brassington, M., Razouk, R.Year:
1989
Language:
english
DOI:
10.1109/iedm.1989.74271
File:
PDF, 482 KB
english, 1989