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[IEEE 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2013.06.5-2013.06.6)] 2013 IEEE International Meeting for Future of Electron Devices, Kansai - I–V characteristics of AlxTiyO/GaAs(001) metal-insulator-semiconductor structures

Ui, Toshimasa, Kudo, Masahiro, Suzuki, Toshi-kazu
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Year:
2013
Language:
english
DOI:
10.1109/imfedk.2013.6602237
File:
PDF, 248 KB
english, 2013
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