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[IEEE Proceedings of IEEE International Electron Devices Meeting - Washington, DC, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - New design technology for EEPROM memory cells with 10 million write/erase cycling endurance
Endoh, T., Shirota, R., Tanaka, Y., Nakayama, R., Kirisawa, R., Aritome, S., Masuoka, F.Year:
1989
Language:
english
DOI:
10.1109/iedm.1989.74352
File:
PDF, 499 KB
english, 1989