Time-Dependent Dielectric Breakdown and Stress-Induced...

IEEE Transactions on Device and Materials Reliability 2011 / 06 Vol. 11; Iss. 2

Time-Dependent Dielectric Breakdown and Stress-Induced Leakage Current Characteristics of 0.7-nm-EOT $\hbox{HfO}_{2}$ pFETs

O'Connor, Robert, Hughes, Greg, Kauerauf, Thomas
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Volume:
11
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2011.2149527
Date:
June, 2011
File:
PDF, 630 KB
english, 2011
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