A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT)
Spulber, O., Narayanan, E.M.S., Hardikar, S., De Souza, M.M., Sweet, M., Bose J.V., S.C.Volume:
20
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.798050
Date:
November, 1999
File:
PDF, 66 KB
english, 1999