[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - High-k/Ge p- & n-MISFETs with strontium germanide interlayer for EOT scalable CMIS application
Kamata, Yoshiki, Ikeda, Keiji, Kamimuta, Yuuichi, Tezuka, TsutomuYear:
2010
Language:
english
DOI:
10.1109/vlsit.2010.5556231
File:
PDF, 389 KB
english, 2010