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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - 3D integration by Cu-Cu thermo-compression bonding of extremely thinned bulk-Si die containing 10 μm pitch through-Si vias
Swinnen, B., Ruythooren, W., De Moor, P., Bogaerts, L., Carbonell, L., De Munck, K., Eyckens, B., Stoukatch, S., Tezcan, D. Sabuncuoglu, Tokei, Z., Vaes, J., Van Aelst, J., Beyne, E.Year:
2006
Language:
english
DOI:
10.1109/iedm.2006.346786
File:
PDF, 1.25 MB
english, 2006