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n+-InP(silicon implanted)/p-InP homojunction: Minority carrier diffusion length in the implanted layer
L. Gouskov, A.L. Conjeaud, A. Dhouib, P.N. Favennec, M. Salvi, H. L'Haridon, G. Bastide, D. BayaaVolume:
11
Year:
1984
Language:
english
Pages:
13
DOI:
10.1016/0379-6787(84)90098-x
File:
PDF, 466 KB
english, 1984