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[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - A unified model of metallic filament growth dynamics for conductive-bridge random access memory (CBRAM)

Qin, Shengjun, Zhang, Jinyu, Yu, Zhiping
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Year:
2013
Language:
english
DOI:
10.1109/sispad.2013.6650645
File:
PDF, 256 KB
english, 2013
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