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[IEEE 4th International Conference on Solid-State and IC Technology - Beijing, China (24-28 Oct. 1995)] Proceedings of 4th International Conference on Solid-State and IC Technology - Models of material parameters for strained Si/sub 1-x/Ge/sub x/ layers and study of hot-carrier transport and high frequency performance of Si/SiGe HBT
Wengang Wu,, Wanrong Zhang,, Zheng Zeng,, Jinsheng Luo,Year:
1995
Language:
english
DOI:
10.1109/icsict.1995.500238
File:
PDF, 145 KB
english, 1995