[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy
Dombrowski, K.F., Fischer, A., Dietrich, B., De Wolf, I., Bender, H., Pochet, S., Simons, V., Rooyackers, R., Badenes, G., Stuer, C., Van Landuyt, J.Year:
1999
Language:
english
DOI:
10.1109/iedm.1999.824169
File:
PDF, 553 KB
english, 1999