[IEEE International Electron Devices Meeting 1999....

  • Main
  • [IEEE International Electron Devices...

[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy

Dombrowski, K.F., Fischer, A., Dietrich, B., De Wolf, I., Bender, H., Pochet, S., Simons, V., Rooyackers, R., Badenes, G., Stuer, C., Van Landuyt, J.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
1999
Language:
english
DOI:
10.1109/iedm.1999.824169
File:
PDF, 553 KB
english, 1999
Conversion to is in progress
Conversion to is failed