[IEEE CAS 2005 2005 International Semiconductor Conference, 2005. - Sinaia, Romania (Oct. 3-5, 2005)] CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005. - The junction edge leakage current and the blocking I-V characteristics of commercial glass passivated thyristor devices
Obreja, V., Manea, E., Codreanu, C., Avram, M., Podaru, C.Volume:
2
Year:
2005
Language:
english
DOI:
10.1109/smicnd.2005.1558823
File:
PDF, 2.21 MB
english, 2005