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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - A high-density SRAM design technique using silicon nanowire FETs
Liao, Yi-Bo, Chiang, Meng-Hsueh, Kim, Keunwoo, Hsu, Wei-ChouYear:
2011
Language:
english
DOI:
10.1109/isdrs.2011.6135407
File:
PDF, 311 KB
english, 2011