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Characterization of structural defects in semipolar $\{ 20\bar{2}1\} $ GaN layers grown on $\{ 22\bar{4}3\} $ patterned sapphire substrates
Yamane, Keisuke, Inagaki, Takashi, Hashimoto, Yasuhiro, Koyama, Masakazu, Okada, Narihito, Tadatomo, KazuyukiVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.035502
Date:
March, 2014
File:
PDF, 1002 KB
english, 2014