N-type porous silicon doping using phosphorous oxychloride...

IEEE Electron Device Letters 2000 / 09 Vol. 21; Iss. 9

N-type porous silicon doping using phosphorous oxychloride (POCl3)

El-Bahar, A., Stolyarova, S., Nemirovsky, Y.
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Volume:
21
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.863102
Date:
September, 2000
File:
PDF, 50 KB
english, 2000
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