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[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Analysis of HCS in STI-based LDMOS transistors
Reggiani, Susanna, Poli, Stefano, Gnani, Elena, Gnudi, Antonio, Baccarani, Giorgio, Denison, Marie, Pendharkar, Sameer, Wise, Rick, Seetharaman, SridharYear:
2010
Language:
english
DOI:
10.1109/irps.2010.5488712
File:
PDF, 695 KB
english, 2010