[IEEE 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Yokohama, Japan (2014.9.9-2014.9.11)] 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Accurate fringe capacitance model considering RSD and metal contact for realistic FinFETs and circuit performance simulation
Choe, Kyeungkeun, An, TaeYoon, Kim, SoYoungYear:
2014
Language:
english
DOI:
10.1109/sispad.2014.6931555
File:
PDF, 514 KB
english, 2014