[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology...

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[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Capri, Italy (2009.10.12-2009.10.14)] 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures

Pezzimenti, F., Albanese, L. Freda, Bellone, S., Corte, F. G. Della
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Year:
2009
Language:
english
DOI:
10.1109/bipol.2009.5314147
File:
PDF, 728 KB
english, 2009
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