The Effect of Silicon Nitride Stoichiometry on Charging...

IEEE Transactions on Microwave Theory and Techniques 2009 / 12 Vol. 57; Iss. 12

The Effect of Silicon Nitride Stoichiometry on Charging Mechanisms in RF-MEMS Capacitive Switches

Tavassolian, N., Koutsoureli, M., Papandreou, E., Papaioannou, G., Lacroix, B., Liu, Z., Papapolymerou, J.
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Volume:
57
Language:
english
Journal:
IEEE Transactions on Microwave Theory and Techniques
DOI:
10.1109/tmtt.2009.2033865
Date:
December, 2009
File:
PDF, 757 KB
english, 2009
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