[IEEE 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. - Honolulu, HI, USA (June 13-15, 2006)] 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. - 50 nm Silicon-On-Insulator N-MOSFET Featuring Multiple Stressors: Silicon-Carbon Source/Drain Regions and Tensile Stress Silicon Nitride Liner

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