Dose Enhancement Due to Interconnects in Deep-Submicron...

IEEE Transactions on Nuclear Science 2009 / 08 Vol. 56; Iss. 4

Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays

Griffoni, Alessio, Silvestri, Marco, Gerardin, Simone, Meneghesso, Gaudenzio, Paccagnella, Alessandro, Kaczer, Ben, de Potter de ten Broeck, Muriel, Verbeeck, Rita, Nackaerts, Axel
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Volume:
56
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2009.2012860
Date:
August, 2009
File:
PDF, 648 KB
english, 2009
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