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[IEEE 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO) - Ilsan, Gyeonggi-Do, Korea (South) (2010.08.17-2010.08.20)] 10th IEEE International Conference on Nanotechnology - Gate leakage current in double-gate MOSFETs with Si/SiO2 interface model from first principle calculations
Yongjin Park,, Ki-jeong Kong,, Hyunju Chang,, Mincheol Shin,Year:
2010
DOI:
10.1109/nano.2010.5697871
File:
PDF, 189 KB
2010