Temperature and Electrical Field Dependence of the...

Materials Science Forum 2014 / 2 Vol. 778-780

Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC

Hürner, Andreas, Bonse, C., Clemmer, G., Kallinger, B., Heckel, T., Erlbacher, T., Mitlehner, H., Häublein, V., Bauer, A.J., Frey, L.
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.778-780.487
Date:
February, 2014
File:
PDF, 4.02 MB
english, 2014
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