Time-to-Breakdown Weibull Distribution of Thin Gate Oxide...

IEEE Transactions on Device and Materials Reliability 2008 / 06 Vol. 8; Iss. 2

Time-to-Breakdown Weibull Distribution of Thin Gate Oxide Subjected to Nanoscaled Constant-Voltage and Constant-Current Stresses

You-Lin Wu,, Shi-Tin Lin,, Chih-Peng Lee,
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Volume:
8
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2008.918987
Date:
June, 2008
File:
PDF, 407 KB
english, 2008
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