Demonstration of 3500-V 4H-SiC Lateral MOSFETs

IEEE Electron Device Letters 2011 / 03 Vol. 32; Iss. 3

Demonstration of 3500-V 4H-SiC Lateral MOSFETs

Lee, Wen-Shan, Lin, Cheng-Wei, Yang, Ming-Hsien, Huang, Chih-Fang, Gong, Jeng, Feng, Zhao
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2101041
Date:
March, 2011
File:
PDF, 309 KB
english, 2011
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