[IEEE 2010 IEEE 3rd International Nanoelectronics...

  • Main
  • [IEEE 2010 IEEE 3rd International...

[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Effects of technological and geometrical parameters of a tri-gate MOSFET fabricated in a bulk technology

Ramadout, B., Lu, G.-N., Carrere, J.P., Pinzelli, L., Perrot, C., Rivoire, M., Nemouchi, F.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2010
Language:
english
DOI:
10.1109/inec.2010.5424610
File:
PDF, 2.52 MB
english, 2010
Conversion to is in progress
Conversion to is failed