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[IEEE 2010 IEEE International Integrated Reliability Workshop (IIRW) - S. Lake Tahoe, CA, USA (2010.10.17-2010.10.21)] 2010 IEEE International Integrated Reliability Workshop Final Report - Impact of the storage layer charging on Random Telegraph Noise behavior of sub-50nm charge-trap-based TANOS and floating-gate memory cells
Seidel, K., Hoffmann, R., Naumann, A., Paul, J., Lohr, D.A., Czernohorsky, M., Beyer, V.Year:
2010
Language:
english
DOI:
10.1109/iirw.2010.5706496
File:
PDF, 212 KB
english, 2010