Suppression of the boron penetration induced Si/SiO/sub 2/...

IEEE Electron Device Letters 1994 / 05 Vol. 15; Iss. 5

Suppression of the boron penetration induced Si/SiO/sub 2/ interface degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET

Shye Lin Wu,, Chung Len Lee,, Tan Fu Lei,, Chen, J.F., Chen, L.J.
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Volume:
15
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.291600
Date:
May, 1994
File:
PDF, 229 KB
english, 1994
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