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[IEEE 2006 IEEE International Reliability Physics Symposium Proceedings - San Jose, CA, USA (2006.03.26-2006.03.30)] 2006 IEEE International Reliability Physics Symposium Proceedings - Impact of Crystalline Phase of Ni-Full-Silicide Gate Electrode on TDDB Reliability of HfSiON Gate Stacks
Onizawa, Takashi, Terai, Masayuki, Toda, Akio, Oshida, Makiko, Ikarashi, Nobuyuki, Hase, Takashi, Fujieda, Shinji, Watanabe, HirohitoYear:
2006
Language:
english
DOI:
10.1109/relphy.2006.251216
File:
PDF, 493 KB
english, 2006