[IEEE 2006 IEEE International Reliability Physics Symposium...

  • Main
  • [IEEE 2006 IEEE International...

[IEEE 2006 IEEE International Reliability Physics Symposium Proceedings - San Jose, CA, USA (2006.03.26-2006.03.30)] 2006 IEEE International Reliability Physics Symposium Proceedings - Impact of Crystalline Phase of Ni-Full-Silicide Gate Electrode on TDDB Reliability of HfSiON Gate Stacks

Onizawa, Takashi, Terai, Masayuki, Toda, Akio, Oshida, Makiko, Ikarashi, Nobuyuki, Hase, Takashi, Fujieda, Shinji, Watanabe, Hirohito
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2006
Language:
english
DOI:
10.1109/relphy.2006.251216
File:
PDF, 493 KB
english, 2006
Conversion to is in progress
Conversion to is failed