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[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Dramatically enhanced performance of recessed SiGe source-drain pmos by in-situ etch and regrowth technique (InSERT)
Ueno, T., Hwa Sung Rhee,, Seung Hwan Lee,, Ho Lee,, Dong Suk Shin,, Yun-Seung Jin,, Maeda, S., Nae-In Lee,Year:
2005
Language:
english
DOI:
10.1109/.2005.1469197
File:
PDF, 784 KB
english, 2005