[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Dramatically enhanced performance of recessed SiGe source-drain pmos by in-situ etch and regrowth technique (InSERT)

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