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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Performance enhancement of partially- and fufly-depleted strained-SOI MOSFETs and characterization of strained-Si device parameters
Numata, T., Trisawa, T., Tezuka, T., Koga, J., Hirashita, N., Usuda, K., Toyoda, E., Miyamura, Y., Tanabe, A., Sugiyarna, N., Takagi, S.Year:
2004
Language:
english
DOI:
10.1109/iedm.2004.1419100
File:
PDF, 291 KB
english, 2004