![](/img/cover-not-exists.png)
[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - 9nm half-pitch functional resistive memory cell with <1µA programming current using thermally oxidized sub-stoichiometric WOx film
ChiaHua Ho,, Cho-Lun Hsu,, Chun-Chi Chen,, Jan-Tsai Liu,, Cheng-San Wu,, Chien-Chao Huang,, Chenming Hu,, Fu-Liang Yang,Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703389
File:
PDF, 1004 KB
english, 2010