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[IEEE 1995 International Symposium on VLSI Technology, Systems, and Applications. - Taipei, Taiwan (31 May-2 June 1995)] 1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers - Impact of process-induced damage on MOSFET reliability and suppression of damage by the use of NO-based oxynitride gate dielectrics
Min, B.W., Bhat, M., Han, L.K., Cho, T.H., Joshi, A.B., Mann, R., Chung, L., Kwong, D.L.Year:
1995
Language:
english
DOI:
10.1109/vtsa.1995.524702
File:
PDF, 413 KB
english, 1995