[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Compact modeling of drain and gate current noise for RF CMOS
Scholten, A.J., Tiemeijer, L.F., van Langevelde, R., Havens, R.J., Venezia, V.C., Zegers-van Duijnhoven, A.T.A., Neinhus, B., Jungemann, C., Klaasen, D.B.M.Year:
2002
Language:
english
DOI:
10.1109/iedm.2002.1175795
File:
PDF, 240 KB
english, 2002