Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm
Ramírez, J. M., Cueff, S., Berencén, Y., Labbé, C., Garrido, B.Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4893706
Date:
August, 2014
File:
PDF, 973 KB
english, 2014