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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - RF performance boosting for 40nm-node CMOS device by low-k/Cu dual damascene contact
Kawahara, J., Hijioka, K., Kume, I., Nagase, H., Tanabe, A., Ueki, M., Yamamoto, H., Ito, F., Inoue, N., Tagami, M., Furutake, N., Onodera, T., Saito, S., Takeuchi, T., Fukai, T., Asada, M, Arita, K.,Year:
2008
Language:
english
DOI:
10.1109/iedm.2008.4796765
File:
PDF, 701 KB
english, 2008