[IEEE International Electron Devices Meeting. Technical...

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[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - A 1.29 um/sup 2/ full CMOS ultra-low power SRAM cell with 0.12 um spacer-on-stopper (SOS) CMOS technology

Sung-Bong Kim,, Do-Hyung Kim,, Kwang-Ok Koh,, Yong Park,, Han-Shin Lee,, Jai-Kyun Park,, Joon-Yong Joo,, Jin-Ho Kim,, Byung-Joon Hwang,, Moo-Sung Kim,, Ji-Young Lee,, Suk-Joo Lee,, Seung-H
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Year:
2001
Language:
english
DOI:
10.1109/iedm.2001.979478
File:
PDF, 337 KB
english, 2001
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