[IEEE 2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) - Daerah Langkawi, Malaysia (2013.09.25-2013.09.27)] RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics - Single and dual strained channel analysis of vertical strained — SiGe impact ionization MOSFET (VESIMOS)
Saad, Ismail, Seng, C Bun, Zuhir, H Mohd, Nurmin, B, Khairul, A. M., Ghosh, Bablu, Ismail, Razali, Hashim, U.Year:
2013
Language:
english
DOI:
10.1109/rsm.2013.6706540
File:
PDF, 238 KB
english, 2013