[IEEE ESSDERC 2010 - 40th European Solid State Device Research Conference - Sevilla, Spain (2010.09.14-2010.09.16)] 2010 Proceedings of the European Solid State Device Research Conference - Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs
Ota, Kensuke, Saitoh, Masumi, Nakabayashi, Yukio, Ishihara, Takamitsu, Numata, Toshinori, Uchida, KenYear:
2010
Language:
english
DOI:
10.1109/essderc.2010.5618447
File:
PDF, 440 KB
english, 2010