[IEEE Fifth International Conference on Solid-State and Integrated Circuit Technology-ICSICT'98 - Beijing, China (21-23 Oct. 1998)] 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) - 290 V high voltage NMOSFET with two different doping level drift regions by compatible 1.5 μm CMOS technology

The file will be sent to your email address. It may take up to 1-5 minutes before you receive it.

The file will be sent to you via the Telegram messenger. It may take up to 1-5 minutes before you receive it.

Note: Make sure you have linked your account to Z-Library Telegram bot.

The file will be sent to your Kindle account. It may take up to 1–5 minutes before you receive it.

Please note: you need to verify every book you want to send to your Kindle. Check your mailbox for the verification email from Amazon Kindle.