[Japan Soc. Applied Phys 2003 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (10-12 June 2003)] 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) - A novel self-aligned shallow trench isolation cell for 90 nm 4 Gbit NAND flash EEPROMs
Ichige, M., Takeuchi, Y., Sugimae, K., Sato, A., Matsui, M., Kamigaichi, T., Kutsukake, H., Ishibashi, Y., Saito, M., Mori, S., Meguro, H., Miyazaki, S., Miwa, T., Takahashi, S., Iguchi, T., Kawai, N.Year:
2003
Language:
english
DOI:
10.1109/vlsit.2003.1221100
File:
PDF, 179 KB
english, 2003