[IEEE 2011 Spanish Conference on Electron Devices (CDE) - Palma de Mallorca, Spain (2011.02.8-2011.02.11)] Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 - Asymmetrically-recessed nano-scale In0.52Al0.48As-In0.53Ga0.47As double-gate HEMT for high breakdown voltage
Rathi, Servin, Gupta, Mridula, Gupta, R. S.Year:
2011
Language:
english
DOI:
10.1109/sced.2011.5744193
File:
PDF, 755 KB
english, 2011