Resistive Switching in Organic Memory Device Based on...

IEEE Transactions on Electron Devices 2012 / 12 Vol. 59; Iss. 12

Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

Huang, Ru, Tang, Yu, Kuang, Yongbian, Ding, Wei, Zhang, Lijie, Wang, Yangyuan
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2012.2220142
Date:
December, 2012
File:
PDF, 1.10 MB
english, 2012
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