[IEEE 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings - San Diego, CA, USA (25-27 Aug. 2003)] 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) - Frequency and breakdown properties of AlGaN/GaN HEMTs
Vertiatchikh, A., Schaff, W.J., Eastman, L.F., Matulionis, A.Year:
2004
Language:
english
DOI:
10.1109/iscspc.2003.1354444
File:
PDF, 260 KB
english, 2004