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[IEEE 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings - San Diego, CA, USA (25-27 Aug. 2003)] 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) - Frequency and breakdown properties of AlGaN/GaN HEMTs

Vertiatchikh, A., Schaff, W.J., Eastman, L.F., Matulionis, A.
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Year:
2004
Language:
english
DOI:
10.1109/iscspc.2003.1354444
File:
PDF, 260 KB
english, 2004
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